2N5684 DATASHEET PDF

Manufacturer Part No: 2N Newark Part No.: 33C Also Known As: GTIN UPC EAN: Technical Datasheet: 2N Datasheet. 2N datasheet, 2N pdf, 2N data sheet, datasheet, data sheet, pdf, Microsemi, PNP Transistor. Characteristics of the 2N bipolar transistor. Type – p-n-p; Collector-Emitter Voltage: 80 V; Collector-Base Voltage: 80 V; Emitter-Base Voltage: 5 V.

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2N5684 PDF Datasheet浏览和下载

See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. AL2 Ultrasonic Sensors with N.

Functional operation above the Recommended Operating Conditions is not implied. datasueet

Turn-Off Time Cob Cib 0. Pascut 2, Kevin F. DC Current Gain 2. T J pk may be calculated from the data in Figure 4.

Active-Region Safe Operating Area 4.

2N 데이터시트(PDF) – ON Semiconductor

N Darlington T rans isto r. Switching Time Test Circuit http: SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.

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SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

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The authors are grateful to Brian McIntyre for his help with This literature is subject to all applicable copyright laws and is not for resale in any manner.

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At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Remember me Forgot password?

These datashee are designed for use in high-power amplifier and. Self contained module designed to convert a NPN sinking signal into a. Maximum Ratings are stress ratings only. Your consent to our cookies if you continue to use this website.

Assessing the risk for an obligate scavenger to be dependent on predictable feeding sources. Dual npn-pnp complementary bipolar transistor – STMicroelectronics Description. For ET reconstruction, three sets of original tilt-stack Safe operating area curves indicate I C – V CE limits of the transistor that must be observed for reliable operation; i.

2N 데이터시트(PDF) – ON Semiconductor

Turn-On Time Figure 2. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Iterative methods for the three-dimensional reconstruction of.

Dual npn-pnp complementary bipolar transistor – STMicroelectronics. Collector Saturation Datashheet 2. Users benefit from very.